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Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors

arXiv
Authors: T. D. Nhut, S. Bonen, G. Cooke, T. Jager, M. Spasaro, D. Sufra, S. P. Voinigescu, D. Zito

Year

2024

Paper ID

66406

Status

Preprint

Abstract Read

~2 min

Abstract Words

106

Citations

N/A

Abstract

This paper reports the experimental characterization at the cryogenic temperature of a compact mm-wave broadband single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch consists of two n-MOSFETs with a special device option to reduce the substrate parasitic effects, and a third n-MOSFET to improve isolation. Unlike prior wideband mm-wave switches, it does not require any large passive components, allowing a very compact design, low loss and high isolation performance. The cryogenic measurements at 2 K show an insertion loss lower than 2.3 dB, an isolation better than 25.3 dB, and the return loss better than -11.5 dB, over the entire frequency range from DC to 70 GHz.

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  • This paper reports the experimental characterization at the cryogenic temperature of a compact mm-wave broadband single-pole single-throw (SPST) switch in 22nm FDSOI CMOS...

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References & Citation Signals

[1] DOI https://doi.org/arXiv:2406.12105 [2] arXiv https://arxiv.org/abs/2406.12105 [3] Publisher https://arxiv.org/abs/2406.12105

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