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Identifying impurities in a silicon substrate by using a superconducting flux qubit
arXiv
Authors: Hiraku Toida, Kosuke Kakuyanagi, Leonid V. Abdurakhimov, Masahiro Hori, Yukinori Ono, Shiro Saito
Year
2024
Paper ID
66253
Status
Preprint
Abstract Read
~2 min
Abstract Words
94
Citations
N/A
Abstract
A bismuth-doped silicon substrate was analyzed by using a magnetometer based on a superconducting flux qubit. The temperature dependence of the magnetization indicates that the silicon substrate contains at least two signal sources, intentionally doped bismuth spins and a spin 1/2 system with a ratio of 0.873 to 0.127. In combination with a conventional electron spin resonance spectrometer, a candidate origin of the spin 1/2 system was identified as a dangling bond on the silicon surface. In addition, the spin sensitivity of the magnetometer was also estimated to be 12 spins/sqrt{Hz} by using optimized dispersive readout.
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- A bismuth-doped silicon substrate was analyzed by using a magnetometer based on a superconducting flux qubit.
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