Theoretical studies of the influence of the interfaces on the radiation intensity of optical transitions and lifetimes of electronic excitations in germanium/silicon nanosystems with germanium quantum dots

In mini-review, theoretical studies of some optical properties of heteronanosystems of the second type are considered. These nanosystems are germanium/silicon with germanium quantum dots (QDs). The influence of the interfaces on the radiation intensity of optical transitions and lifetimes of electronic excitations in germanium/silicon nanosystems with germanium in the germanium/silicon nanosystems with germanium QDs is studied. Dipole-allowed optical transitions between quasi-stationary and stationary states, which occur over the spherical surface of a single germanium QD embedded in a silicon matrix, are theoretically investigated. A mechanism is proposed for a significant increase (four times) in the intensities of optical interband and intraband transitions between quasi-stationary and stationary SIE-states arising above a spherical surface of a single germanium QD placed in a silicon matrix. These optical electronic transitions occur in the real space of the silicon matrix. Such a mechanism, apparently, will apparently solve the problem of a significant increase in the radiative intensity in germanium/silicon heterostructures with germanium QDs. This will provide an opportunity to develop fundamental and applied foundations, allowing to create a new generation of effective light-emitting and photodetector devices based on germanium/silicon heterostructures with germanium quantum dots. The theoretically predicted long-lived SIE-states, apparently, will make it possible to realize high-temperature quantum Bose-gases SIE-states in the nanosystem under study.