Complex band structure and electronic transmission

The function of nano-scale devices critically depends on the choice of materials. For electron transport junctions it is natural to characterize the materials by their conductance length dependence, β. Theoretical estimations of β are made employing two primary theories: complex band structure and DFT-NEGF Landauer transport. Both reveal information on β of individual states; i.e. complex Bloch waves and transmission eigenchannels, respectively. However, it is unclear how the β-values of the two approaches compare. Here, we present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT-NEGF transport calculations for two molecular and one semi-conductor junctions. Despite the different nature of the two methods, we find strong agreement of the calculated decay constants for the molecular junctions while the semi-conductor junction shows some discrepancies. The results presented here provide a template for studying the intrinsic, channel resolved length dependence of the junction through complex band structure of the central material in the heterogeneous nano-scale junction.