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Trapped Ion Quantum Computing
Quantum Simulation
Electrically and mechanically tunable electron spins in silicon carbide color centers
arXiv
Authors: Abram L. Falk, Paul V. Klimov, Bob B. Buckley, Viktor Ivády, Igor A. Abrikosov, Greg Calusine, William F. Koehl, Ádám Gali, David D. Awschalom
Year
2013
Paper ID
31722
Status
Preprint
Abstract Read
~2 min
Abstract Words
79
Citations
N/A
Abstract
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.
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- The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables...
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