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Trapped Ion Quantum Computing Quantum Simulation

Electrically and mechanically tunable electron spins in silicon carbide color centers

arXiv
Authors: Abram L. Falk, Paul V. Klimov, Bob B. Buckley, Viktor Ivády, Igor A. Abrikosov, Greg Calusine, William F. Koehl, Ádám Gali, David D. Awschalom

Year

2013

Paper ID

31722

Status

Preprint

Abstract Read

~2 min

Abstract Words

79

Citations

N/A

Abstract

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.

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  • The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables...

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