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Spin Qubits Silicon Quantum Computing Quantum Chemistry

Growth of InAs Quantum Dots on InP Substrates Based on MOCVD Technology: Study on the Influence of InAlGaAs Capping Layer Thickness on Luminescent Properties and Band Structure Engineering

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Authors: Yun Zhang, Hao Wang, Dengkui Wang, Xinyu Zhao, zungui ke, Jia Lu, 铉 方, Yue Li

Year

2026

Paper ID

25536

Status

Peer-reviewed

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  • This paper contributes to the Quantum Chemistry research area in the Quantum Articles archive.
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References & Citation Signals

[1] DOI https://doi.org/10.1021/acs.cgd.5c01804 [2] Publisher https://doi.org/10.1021/acs.cgd.5c01804

Local Citation Graph (Related-Paper Links)

Current Paper #25536 #69042 Simultaneous Fragment Docking f... #69037 Spin dynamics and ortho-para co... #69012 Projector Quantum Variational A... #69006 Elucidating the Control of Circ...

External citation index: OpenAlex citation signal • updated 2026-06-13 20:06:42

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