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Photonic Quantum Computing Quantum Simulation

Engineering AlGaAs-on-insulator towards quantum optical applications

arXiv

Authors: Marlon Placke, Sven Ramelow

Year

2020

Paper ID

21194

Status

Preprint

Abstract Read

~2 min

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Abstract

Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band gap for broadband low-loss operation. However, its full potential for record-strength nonlinear interactions is only released when the semiconductor is embedded within a dielectric cladding to produce highly confining waveguides. From simulations of such, we present second and third order pair generation that could improve upon state-of-the-art quantum optical sources and make novel regimes of strong parametric photon-photon nonlinearities accessible.

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This paper contributes to the Quantum Simulation research area in the Quantum Articles archive.
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Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic...

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References & Citation Signals

[1] DOI https://doi.org/arXiv:2008.11531 [2] arXiv https://arxiv.org/abs/2008.11531 [3] Publisher https://arxiv.org/abs/2008.11531

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