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Trapped Ion Quantum Computing Quantum Chemistry

Advances in ultrashallow doping of silicon

DOAJ
Authors: Chufan Zhang, Shannan Chang, Yaping Dan

Year

2021

Paper ID

18026

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

62

Citations

16

Abstract

Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolayer doping, molecular beam epitaxy, and low energy ion implantation. A research perspective will be provided at the end of this review.

Why This Paper Matters

  • This paper contributes to the Quantum Chemistry research area in the Quantum Articles archive.
  • It adds a 2021 reference point for readers tracking recent quantum research.
  • Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing.

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Current Paper #18026 #69012 Projector Quantum Variational A... #69006 Elucidating the Control of Circ... #69042 Simultaneous Fragment Docking f... #69039 SAT, MaxSAT, and SMT for QLDPC ...

External citation index: OpenAlex citation signal • updated 2026-06-19 15:11:16

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