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Photonic Quantum Computing Quantum Chemistry

Intersubband electroluminescence from silicon-based quantum cascade structures.

PubMed
Authors: Dehlinger G, Diehl L, Gennser U, Sigg H, Faist J, Ensslin K, Grutzmacher D, Muller E

Year

2000

Paper ID

13259

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

111

Citations

292

Abstract

The quantum cascade laser, which uses electronic transitions within a single band of a semiconductor, constitutes a possible way to integrate active optical components into silicon-based technology. This concept necessitates a transition with a narrow linewidth and an upper state with a sufficiently long lifetime. We report the observation of intersubband electroluminescence from a p-type silicon/silicon-germanium quantum cascade structure, centered at 130 millielectron volts with a width of 22 millielectron volts, with the expected polarization, and discernible up to 180 kelvin. The nonradiative lifetime is found to depend strongly on the design of the quantum well structure, and is shown to reach values comparable to that of an equivalent GaInAs/AlInAs laser structure.

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  • The quantum cascade laser, which uses electronic transitions within a single band of a semiconductor, constitutes a possible way to integrate active optical components into...

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References & Citation Signals

[1] DOI https://doi.org/10.1126/science.290.5500.2277 [2] Publisher https://pubmed.ncbi.nlm.nih.gov/11125134/

Local Citation Graph (Related-Paper Links)

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External citation index: OpenAlex citation signal • updated 2026-06-15 15:20:13

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