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Quantum Chemistry

High temperature gate control of quantum well spin memory.

PubMed
Authors: Karimov OZ, John GH, Harley RT, Lau WH, Flatté ME, Henini M, Airey R

Year

2003

Paper ID

13014

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

81

Citations

149

Abstract

Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm(-1) at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20 kV cm(-1) reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.

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  • Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from...

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References & Citation Signals

[1] DOI https://doi.org/10.1103/PhysRevLett.91.246601 [2] Publisher https://pubmed.ncbi.nlm.nih.gov/14683140/

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