Quick Navigation

Overview Topics Abstract Importance Paper Tools References Reactions Discussion Publication Related

Topics

Spin Qubits Silicon Quantum Computing Quantum Chemistry

Charged basal stacking fault (BSF) scattering in nitride semiconductors

arXiv

Authors: Aniruddha Konar, Tian Fang, Nan Sun, Debdeep Jena

Year

2010

Paper ID

10597

Status

Preprint

Abstract Read

~2 min

Abstract Words

Citations

N/A

Abstract

A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in non-polar GaN films consisting of a large number BSFs, and the result is compared with experimental data.

Why This Paper Matters

This paper contributes to the Quantum Chemistry research area in the Quantum Articles archive.
It adds a 2010 reference point for readers tracking recent quantum research.
A theory of charge transport in semiconductors in the presence of basal stacking faults is developed.

Paper Tools

Become a member to use research tools

Sign in to open papers, visit source links, share, cite, compare, copy DOI links, request category corrections, and build your reading list.

Become a member Sign in

Show Paper arXiv Publisher Share Cite This Paper Copy URL Compare Copy DOI Add to Reading List Category Correction Request

References & Citation Signals

[1] DOI https://doi.org/arXiv:1011.0514 [2] arXiv https://arxiv.org/abs/1011.0514 [3] Publisher https://arxiv.org/abs/1011.0514

Local Citation Graph (Related-Paper Links)

External citation index: OpenAlex citation signal

Community Reactions

Quick sentiment from readers on this paper.

Score: 0

Likes: 0 Dislikes: 0

Discussion & Reviews (Moderated)

Average Rating: 0.0 / 5 (0 ratings)

No written reviews yet.