Quantum Simulation
13,420 papers
Quantum Simulation Research Context
This category collects papers on quantum simulation methods for chemistry, materials, many-body systems, condensed matter, and physics models.
Showing 8377-8388 of 13,420
Simulating quantum circuits with ZX-calculus reduced stabiliser decompositions
Aleks Kissinger, John van de Wetering
Simulating Quantum Mechanics with a $θ$-term and an 't Hooft Anomaly on a Synthetic Dimension
Jiayu Shen, Di Luo, Chenxi Huang, Bryan K. Clark, Aida X. El-Khadra, Bryce Gadway, Patrick Draper
Simulating strongly interacting Hubbard chains with the Variational Hamiltonian Ansatz on a quantum computer
Baptiste Anselme Martin, Pascal Simon, Marko J. Rančić
Simulation of adiabatic quantum computing for molecular ground states
Vladimir Kremenetski, Carlos Mejuto-Zaera, Stephen J. Cotton, Norm M. Tubman
Simulation of many body localization and time crystals in two dimensions with the neighborhood tensor update
Jacek Dziarmaga
Simulation of Open Quantum Dynamics with Bootstrap-Based Long Short-Term Memory Recurrent Neural Network
Kunni Lin, Jiawei Peng, Feng Long Gu, Zhenggang Lan
Simulation of quantum many-body dynamics with Tensor Processing Units: Floquet prethermalization
Alan Morningstar, Markus Hauru, Jackson Beall, Martin Ganahl, Adam G. M. Lewis, Vedika Khemani, Guifre Vidal
Simulation of quantum physics with Tensor Processing Units: brute-force computation of ground states and time evolution
Markus Hauru, Alan Morningstar, Jackson Beall, Martin Ganahl, Adam Lewis, Guifre Vidal
Simulation of the Ring-exchange Models with Projected Entangled Pair States
Chao Wang, Shaojun Dong, Yongjian Han, Lixin He
Simulations of hybrid charge-sensing single-electron-transistors and CMOS circuits
Tetsufumi Tanamoto, Keiji Ono
Single-domain Bose condensate magnetometer achieves energy resolution per bandwidth below $\hbar$
Silvana Palacios Alvarez, Pau Gomez, Simon Coop, Roberto Zamora-Zamora, Chiara Mazzinghi, Morgan W. Mitchell
Single-electron spin resonance in a nanoelectronic device using a global field.
Vahapoglu E, Slack-Smith JP, Leon RCC, Lim WH, Hudson FE, Day T, Tanttu T, Yang CH, Laucht A, Dzurak AS, Pla JJ.