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Quantum Chemistry
Voltage controlled nuclear polarization switching in a single InGaAs quantum dot
arXiv
Authors: M. N. Makhonin, J. Skiba-Szymanska, M. S. Skolnick, H. -Y. Liu, M. Hopkinson, A. I. Tartakovskii
Year
2009
Paper ID
9264
Status
Preprint
Abstract Read
~2 min
Abstract Words
92
Citations
N/A
Abstract
Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias applied to the diode is tuned. The abrupt transitions lead to the switching of the Overhauser field in the dot by up to 3 Tesla. The bias-dependent photoluminescence measurements reveal the importance of the electron-tunneling-assisted nuclear spin pumping. We also find evidence for the resonant LO-phonon-mediated electron co-tunneling, the effect controlled by the applied bias and leading to the reduction of the nuclear spin pumping rate.
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