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Voltage controlled nuclear polarization switching in a single InGaAs quantum dot

arXiv
Authors: M. N. Makhonin, J. Skiba-Szymanska, M. S. Skolnick, H. -Y. Liu, M. Hopkinson, A. I. Tartakovskii

Year

2009

Paper ID

9264

Status

Preprint

Abstract Read

~2 min

Abstract Words

92

Citations

N/A

Abstract

Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias applied to the diode is tuned. The abrupt transitions lead to the switching of the Overhauser field in the dot by up to 3 Tesla. The bias-dependent photoluminescence measurements reveal the importance of the electron-tunneling-assisted nuclear spin pumping. We also find evidence for the resonant LO-phonon-mediated electron co-tunneling, the effect controlled by the applied bias and leading to the reduction of the nuclear spin pumping rate.

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  • Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a...

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