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Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

arXiv
Authors: Robert J. Young, Lorenzo O. Mereni, Nikolay Petkov, Gabrielle R. Knight, Valeria Dimastrodonato, Paul K. Hurley, Greg Hughes, Emanuele Pelucchi

Year

2010

Paper ID

9014

Status

Preprint

Abstract Read

~2 min

Abstract Words

107

Citations

N/A

Abstract

We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0, 0.2, 0.4 and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of 4.25 meV found from a 15nm quantum well. The width of the emission from the 15nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K), electron mobilities up to μ 3.5 x 10^4 cm2/Vs with an electron concentration of 1 x 10^16.

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  • We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the...

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References & Citation Signals

[1] DOI https://doi.org/arXiv:1004.1385 [2] arXiv https://arxiv.org/abs/1004.1385 [3] Publisher https://arxiv.org/abs/1004.1385

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