Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate.

Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicinal GaN substrates were used to reduce the edge-component threading dislocation (ETD) density of the InN film. Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps, and the ETD density can be reduced to approximately 5 × 10 cm near the surface of the 5-µm-thick film. The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film. As a result, the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated.