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Trapped Ion Quantum Computing

Review: Towards Spintronic Quantum Technologies with Dopants in Silicon

arXiv
Authors: Gavin W. Morley

Year

2014

Paper ID

8154

Status

Preprint

Abstract Read

~2 min

Abstract Words

91

Citations

N/A

Abstract

Dopants in crystalline silicon such as phosphorus (Si:P) have electronic and nuclear spins with exceptionally long coherence times making them promising platforms for quantum computing and quantum sensing. The demonstration of single-spin single-shot readout brings these ideas closer to implementation. Progress in fabricating atomic-scale Si:P structures with scanning tunnelling microscopes offers a powerful route to scale up this work, taking advantage of techniques developed by the computing industry. The experimental and theoretical sides of this emerging quantum technology are reviewed with a focus on the period from 2009 to mid-2014.

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • Dopants in crystalline silicon such as phosphorus (Si:P) have electronic and nuclear spins with exceptionally long coherence times making them promising platforms for quantum...

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References & Citation Signals

[1] DOI https://doi.org/arXiv:1407.6250 [2] arXiv https://arxiv.org/abs/1407.6250 [3] Publisher https://arxiv.org/abs/1407.6250

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