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Correlating spin and optical properties of quantum emitters in hBN
arXiv
Authors: Nika Teran, Benjamin Whitefield, Nicholas Sloane, Kenji Watanabe, Takashi Taniguchi, Igor Aharonovichand Mehran Kianinia
Year
2026
Paper ID
74260
Status
Preprint
Abstract Read
~2 min
Abstract Words
123
Citations
N/A
Abstract
Optically addressable spin defects in hexagonal boron nitride (hBN) are well suited for near-surface quantum sensing. They offer bright, wavelength-tunable single-photon emission with high optically detected magnetic resonance (ODMR) contrast at room temperature. Here we controllably synthesise a high density of spin-complex defects in carbon-doped hBN flakes. We find that the zero-field splitting parameter D is directly correlated with the zero-phonon line of an emitter, while the ODMR contrast shows no such correlation. We further analyse an individual narrowband defect showing 68% ODMR contrast and enhance its photon collection by 40% using a solid immersion lens. By advancing both the practical synthesis of the spin complexes and the understanding of their microscopic origin, our results move us toward the deterministic creation of ODMR-active quantum emitters
Why This Paper Matters
- It adds a 2026 reference point for readers tracking recent quantum research.
- Optically addressable spin defects in hexagonal boron nitride (hBN) are well suited for near-surface quantum sensing.
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