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Trapped Ion Quantum Computing

Dynamically corrected gates in silicon singlet-triplet spin qubits

arXiv
Authors: Habitamu Y. Walelign, Xinxin Cai, Bikun Li, Edwin Barnes, John M. Nichol

Year

2024

Paper ID

67339

Status

Preprint

Abstract Read

~2 min

Abstract Words

131

Citations

N/A

Abstract

Fault-tolerant quantum computation requires low physical-qubit gate errors. Many approaches exist to reduce gate errors, including both hardware- and control-optimization strategies. Dynamically corrected gates are designed to cancel specific errors and offer the potential for high-fidelity gates, but they have yet to be implemented in singlet-triplet spin qubits in semiconductor quantum dots, due in part to the stringent control constraints in these systems. In this work, we experimentally implement dynamically corrected gates designed to mitigate hyperfine noise in a singlet-triplet qubit realized in a Si/SiGe double quantum dot. The corrected gates reduce infidelities by about a factor of three, resulting in gate fidelities above 0.99 for both identity and Hadamard gates. The gate performances depend sensitively on pulse distortions, and their specific performance reveals an unexpected distortion in our experimental setup.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2024 reference point for readers tracking recent quantum research.
  • Fault-tolerant quantum computation requires low physical-qubit gate errors.

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