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Trapped Ion Quantum Computing

High-Fidelity Electron Spin Gates for Scaling Diamond Quantum Register

arXiv
Authors: Timo Joas, Florian Ferlemann, Roberto Sailer, Philipp J. Vetter, Jingfu Zhang, Ressa S. Said, Tokuyuki Teraji, Shinobu Onoda, Tommaso Calarco, Genko Genov, Matthias M. Müller, Fedor Jelezko

Year

2024

Paper ID

66832

Status

Preprint

Abstract Read

~2 min

Abstract Words

123

Citations

N/A

Abstract

Diamond is a promising platform for quantum information processing as it can host highly coherent qubits that could allow for the construction of large quantum registers. A prerequisite for such devices is a coherent interaction between nitrogen vacancy (NV) electron spins. Entanglement between dipolar-coupled NV spin pairs has been demonstrated, but with a limited entanglement fidelity and its error sources have not been characterized. Here, we design and implement a robust, easy to implement entangling gate between NV spins in diamond and quantify the influence of multiple error sources on the gate performance. Experimentally, we demonstrate a record gate fidelity of F=\(96.0 pm 2.5\) % under ambient conditions. Our identification of the dominant errors paves the way towards NV-NV gates beyond the error correction threshold.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2024 reference point for readers tracking recent quantum research.
  • Diamond is a promising platform for quantum information processing as it can host highly coherent qubits that could allow for the construction of large quantum registers.

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