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Trapped Ion Quantum Computing

Interband and intraband transitions, as well as charge mobility in driven two-band model with electron phonon coupling

arXiv
Authors: Yu Wang, Wenjie Dou

Year

2024

Paper ID

66123

Status

Preprint

Abstract Read

~2 min

Abstract Words

178

Citations

N/A

Abstract

Interband and intraband transitions are fundamental concepts in the study of electronic properties of materials, particularly semiconductors and nanomaterials. These transitions involve the movement of electrons between distinct energy states or bands within a material. Besides, charge mobility is also a critical parameter in materials science and electronics. A thorough understanding of these transitions and mobility is critical for the development and optimization of advanced electronic and optoelectronic devices. In this study, we investigate the influence of external periodic drivings on interband and intraband transitions, as well as charge mobility, within a driven two-band model that includes electron-phonon coupling. These external periodic drivings can include a periodic laser field, a time-varying magnetic or electric field, or an alternating current (AC) voltage source. We have developed the Floquet surface hopping (FSH) and Floquet mean field (FMF) methods to simulate electronic dynamics under various drivings in both real and reciprocal spaces. Our findings demonstrate that periodic drivings can enhance interband transitions while suppressing intraband transitions. Additionally, charge mobility is restrained by these external periodic drivings in the driven two-band model.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2024 reference point for readers tracking recent quantum research.
  • Interband and intraband transitions are fundamental concepts in the study of electronic properties of materials, particularly semiconductors and nanomaterials.

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