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Trapped Ion Quantum Computing

Arbitrary vector beam generation in semiconductor quantum dots

arXiv
Authors: Samit Kumar Hazra, P. K. Pathak, Tarak Nath Dey

Year

2024

Paper ID

65666

Status

Preprint

Abstract Read

~2 min

Abstract Words

120

Citations

N/A

Abstract

We have proposed an arbitrary vector beam (VB) generation scheme in a thin disk-shaped quantum dot (QD) medium considering phonon interaction. The QD biexciton system exhibits interplay between first and third-order nonlinear susceptibility between two orthogonal circular polarisation transitions. Three QD transitions are coupled with one applied weak and two strong control orbital angular momentum (OAM) carrying fields. Therefore, the applied field experiences absorption, and a new field with the desired OAM is generated via four-wave mixing (FWM). These two orthogonal field superpositions produce VB at the QD medium end. We have also demonstrated the polarization rotation of a VB by changing only the relative control field phase. Additionally, we have analyzed the effect of temperature on the VB generation.

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • We have proposed an arbitrary vector beam (VB) generation scheme in a thin disk-shaped quantum dot (QD) medium considering phonon interaction.

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