Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities

On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light on demand, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the emission rate of InAs QDs by coupling them to metal-clad GaAs nanopillars. These cavities, featuring a sub-wavelength mode volume of 4.5x10-4 (λ/n)3 and low quality factor of 62, enable Purcell-enhanced single-photon emission across a large bandwidth of 15 nm. The broadband nature of the cavity eliminates the need for implementing tuning mechanisms typically required to achieve QD-cavity resonance, thus relaxing fabrication constraints. Ultimately, this QD-cavity architecture represents a significant stride towards developing solid-state quantum emitters generating near-ideal single-photon states at GHz-level repetition rates.