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Trapped Ion Quantum Computing

Electrical excitation of color centers in phosphorus-doped diamond Schottky diodes

arXiv
Authors: Florian Sledz, Igor A. Khramtsov, Assegid M. Flatae, Stefano Lagomarsino, Silvio Sciortino, Shannon S. Nicley, Rozita Rouzbahani, Paulius Pobedinskas, Tianxiao Guo, Xin Jiang, Paul Kienitz, Peter Haring Bolivar, Ken Haenen, Dmitry Yu. Fedyanin, Mario Agio

Year

2024

Paper ID

64648

Status

Preprint

Abstract Read

~2 min

Abstract Words

108

Citations

N/A

Abstract

A robust quantum light source operating upon electrical injection at ambient conditions is desirable for practical implementation of quantum technologies, such as quantum key distribution or metrology. Color centers in diamond are promising candidates as they are photostable emitters at room and elevated temperatures. The possibility of their electrical excitation has already been demonstrated within p-i-n diodes. However, this requires the growth of complex diamond structures. In contrast to these conventional approaches, we demonstrate the emission of color centers under electrical pumping in a novel Schottky diode configuration based on hydrogen passivated n-type diamond, which holds promise for integrated single-photon emitting devices based on color centers in diamond.

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • A robust quantum light source operating upon electrical injection at ambient conditions is desirable for practical implementation of quantum technologies, such as quantum key...

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References & Citation Signals

[1] DOI https://doi.org/arXiv:2408.01572 [2] arXiv https://arxiv.org/abs/2408.01572 [3] Publisher https://arxiv.org/abs/2408.01572

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