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Trapped Ion Quantum Computing
Charge state transition of spectrally stabilized tin-vacancy centers in diamond
arXiv
Authors: Keita Ikeda, Yiyang Chen, Peng Wang, Yoshiyuki Miyamoto, Takashi Taniguchi, Shinobu Onoda, Mutsuko Hatano, Takayuki Iwasaki
Year
2024
Paper ID
6202
Status
Preprint
Abstract Read
~2 min
Abstract Words
153
Citations
N/A
Abstract
Solid-state quantum emitters are an important platform for quantum information processing. The fabrication of the emitters with stable photon frequency and narrow linewidth is a fundamental issue, and it is essential to understand optical conditions under which the emitter keeps a bright charge state or transitions to a dark state. For these purposes, in this study, we investigate the spectral stability and charge state transition of tin-vacancy (SnV) centers in diamond. The photoluminescence excitation spectra of multiple SnV centers are basically stable over time with nearly transform-limited linewidths under resonant excitation, while simultaneous irradiation of resonant and non-resonant lasers makes spectra from the SnV centers unstable. We find that the instability occurs due to the charge state transition to a dark state. The charge state transition rates are quantitatively investigated depending on the laser powers. Lastly, with first-principle calculations, we model the charge state transition of the SnV center under the laser irradiation.
Why This Paper Matters
- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
- It adds a 2024 reference point for readers tracking recent quantum research.
- Solid-state quantum emitters are an important platform for quantum information processing.
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