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Trapped Ion Quantum Computing

A two-dimensional 10-qubit array in germanium with robust and localised qubit control

arXiv
Authors: Valentin John, Cécile X. Yu, Barnaby van Straaten, Esteban A. Rodríguez-Mena, Mauricio Rodríguez, Stefan Oosterhout, Lucas E. A. Stehouwer, Giordano Scappucci, Stefano Bosco, Maximilian Rimbach-Russ, Yann-Michel Niquet, Francesco Borsoi, Menno Veldhorst

Year

2024

Paper ID

60510

Status

Preprint

Abstract Read

~2 min

Abstract Words

151

Citations

N/A

Abstract

Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for in situ electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabrication, and qubit control to realise a two-dimensional 10-spin qubit array, with qubits coupled up to four neighbours that can be controlled with high fidelity. By exploring the large parameter space of gate voltages and quantum dot occupancies, we demonstrate that plunger gate driving in the three-hole occupation enhances electric-dipole spin resonance (EDSR), creating a highly localised qubit drive. Our findings, confirmed with analytical and numerical models, highlight the crucial role of intradot Coulomb interaction and magnetic field direction. Furthermore, the ability to engineer qubits for robust control is a key asset for further scaling.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2024 reference point for readers tracking recent quantum research.
  • Quantum computers require the systematic operation of qubits with high fidelity.

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