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Trapped Ion Quantum Computing
A 3-dimensional scanning trapped-ion probe
arXiv
Authors: Tobias Sägesser, Shreyans Jain, Pavel Hrmo, Alexander Ferk, Matteo Simoni, Yingying Cui, Carmelo Mordini, Daniel Kienzler, Jonathan Home
Year
2024
Paper ID
60421
Status
Preprint
Abstract Read
~2 min
Abstract Words
174
Citations
N/A
Abstract
Single-atom quantum sensors offer high spatial resolution and high sensitivity to electric and magnetic fields. Among them, trapped ions offer exceptional performance in sensing electric fields, which has been used in particular to probe these in the proximity of metallic surfaces. However, the flexibility of previous work was limited by the use of radio-frequency trapping fields, which has restricted spatial scanning to linear translations, and calls into question whether observed phenomena are connected to the presence of the radio-frequency fields. Here, using a Penning trap instead, we demonstrate a single ion probe which offers three-dimensional position scanning at distances between 50 μm and 450 μm from a metallic surface and above a 200times200 μm2 area, allowing us to reconstruct static and time-varying electric as well as magnetic fields. We use this to map charge distributions on the metallic surface and noise stemming from it. The methods demonstrated here allow similar probing to be carried out on samples with a variety of materials, surface constitutions and geometries, providing a new tool for surface science.
Why This Paper Matters
- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
- It adds a 2024 reference point for readers tracking recent quantum research.
- Single-atom quantum sensors offer high spatial resolution and high sensitivity to electric and magnetic fields.
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