Near-Infrared Quantum Emission from Oxygen-Related Defects in hBN

Color centers hosted in hexagonal boron nitride (hBN) have emerged as a promising platform for single-photon emission and coherent spin-photon interfaces that underpin quantum communication and quantum networking technologies. As a wide-bandgap van der Waals material, hBN can host individual optically active quantum defects emitting across the ultraviolet to visible spectrum, but existing color centers often show broad phonon sidebands (PSBs), unstable emission, or inconvenient wavelengths. Here, we show a simple, scalable oxygen-plasma process that reproducibly creates oxygen-related single quantum emitters in hBN with blinking-free zero-phonon lines spanning the near-infrared (NIR) spectrum from 700-960 nanometers. These emitters demonstrate room-temperature operation, high brightness, and ultra-sharp cryogenic linewidths in the few-gigahertz range under non-resonant excitation. Analysis of the PSBs shows weak electron-phonon coupling and predominant zero-phonon-line emission, while first-principles calculations identify plausible oxygen-related defect configurations. These emitters provide a promising platform for indistinguishable NIR single photons towards free-space quantum networking.