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Trapped Ion Quantum Computing

Neutral Silicon Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

arXiv
Authors: Zi-Huai Zhang, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Nathalie P. de Leon

Year

2022

Paper ID

59216

Status

Preprint

Abstract Read

~2 min

Abstract Words

101

Citations

N/A

Abstract

Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of SiV0 centers requires careful Fermi level engineering of the diamond host material, making further technological development challenging. Here, we show that SiV0 centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting SiV0 centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of SiV0 centers as well as other emerging quantum defects in diamond.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2022 reference point for readers tracking recent quantum research.
  • Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence.

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References & Citation Signals

[1] DOI https://doi.org/arXiv:2209.08710 [2] arXiv https://arxiv.org/abs/2209.08710 [3] Publisher https://arxiv.org/abs/2209.08710

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