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Spin Qubits Silicon Quantum Computing

Low-frequency noise analysis in dual δ-doped InGaAs quantum well micro Hall sensors with different doping concentrations andlocations

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Authors: Chun-Yi Li, Wilson Yeung-Sy Su, Chii-Bin Wu

Year

2026

Paper ID

56393

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

111

Citations

N/A

Abstract

Abstract We investigated the electric noise characteristics of Hall devices made with dual δ-doped InGaAs quantum wells by varying the doping concentration and location. The noise was studied in the frequency range from 0.1 Hz to 1 kHz at room temperature in a transverse configuration, with an active area of 140 × 140 μm^2. The Hooge parameter was found to be inversely proportional to the square of the carrier concentration, but independent of the doping location. Such significant reduction of noise, in comparison to the Hooge formula, was explained by the screening of potential modulation provided by the dual δ-doped layers. The results indicate the beneficial role of high carrier concentration in such type of device.

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  • Abstract We investigated the electric noise characteristics of Hall devices made with dual δ-doped InGaAs quantum wells by varying the doping concentration and location.

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References & Citation Signals

[1] DOI https://doi.org/10.1088/1361-6641/ae6363 [2] Publisher https://doi.org/10.1088/1361-6641/ae6363

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