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Spin Qubits Silicon Quantum Computing

Edgeless and purely gate-defined nanostructures in InAs quantum wells

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Authors: Christopher Mittag, Matija Karalic, Zijin Lei, Thomas Tschirky, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

Year

2018

Paper ID

5510

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

90

Citations

10

Abstract

Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the physical edges of samples. Here, we present a technique which enables the realization of quantum point contacts and quantum dots in two-dimensional electron gases of InAs purely by electrostatic gating. Multiple layers of top gates separated by dielectric layers are employed. Full quantum point contact pinch-off and measurements of Coulomb-blockade diamonds of quantum dots are demonstrated.

Why This Paper Matters

  • This paper contributes to the Spin Qubits & Silicon Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2018 reference point for readers tracking recent quantum research.
  • Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching.

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References & Citation Signals

[1] DOI https://doi.org/10.1063/1.5055359 [2] Publisher https://doi.org/10.1063/1.5055359

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