Origin of electrical noise near charge neutrality in dual gated graphene device

This letter investigates low frequency 1/ f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nT G) at different back gate densities (nBG). The noise at low nBG is found to be independent of top gate carrier density. With increasing nBG, noise value increases and a noise peak is observed near charge inhomogeneity of the device. Further increase in nBG leads to decrease in noise magnitude. The shape of the noise is found to be closely related to charge inhomogeneity region of the device. Moreover, the noise and conductivity data near charge neutrality shows clear evidence of noise emanating from combination of charge number and mobility fluctuation