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Spin Qubits Silicon Quantum Computing Quantum Chemistry

Single-electron current gain in a quantum dot with three leads

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Authors: Armin C Welker, Jürgen Weis

Year

2019

Paper ID

5435

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

102

Citations

2

Abstract

Abstract The conductance through a quantum dot (QD) between a source and a drain electrode is usually controlled electrostatically by a nearby gate electrode. A periodic modulation of the conductance versus gate voltage is observed, swapping between Coulomb blockade and single-electron tunneling. By controlling the Fermi level of a third (‘base’) lead attached to the QD, we were able to switch a single-electron current from source to drain, exceeding the single-electron current to or from the base lead. A simple model is presented revealing the role of ground- and excited states within the QD for this dynamic operation of a single-electron transistor.

Why This Paper Matters

  • This paper contributes to the Quantum Chemistry research area in the Quantum Articles archive.
  • It adds a 2019 reference point for readers tracking recent quantum research.
  • Abstract The conductance through a quantum dot (QD) between a source and a drain electrode is usually controlled electrostatically by a nearby gate electrode.

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References & Citation Signals

[1] DOI https://doi.org/10.1088/1361-6463/ab5e75 [2] Publisher https://doi.org/10.1088/1361-6463/ab5e75

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