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Trapped Ion Quantum Computing

Security Risks of VOA-Induced Luminescence in Chip-Based quantum key distribution

arXiv
Authors: Zijian Li, Chenyu Xu, Xin Hua, Yongqiang Du, Xin Liu, Tao Lin, Xi Xiao, Kejin Wei

Year

2026

Paper ID

52328

Status

Preprint

Abstract Read

~2 min

Abstract Words

178

Citations

N/A

Abstract

Integrated photonics is widely regarded as a key enabler for scalable quantum key distribution (QKD), offering compactness, stability, and compatibility with semiconductor fabrication. Despite rapid advances in chip-based QKD, the implementation security of integrated photonic components remains insufficiently understood. Here we present the first systematic study of an implementation-level security vulnerability associated with p-n junction-based variable optical attenuators (VOAs), a ubiquitous component in integrated QKD transmitters. We theoretically and experimentally demonstrate that electrically biased p-n junction VOAs emit spontaneous luminescence. Using a single-photon-sensitive spectral measurement technique, we identify the emission wavelength to be centered around 1107 nm, well separated from the C-band quantum signals. This spectral separation gives rise to a previously unrecognized wavelength-resolved side channel, enabling potential wavelength-splitting attacks without directly disturbing the encoded quantum states. By incorporating the measured luminescence into a quantitative security analysis, we show that even extremely weak emission can lead to non-negligible information leakage. Our findings reveal a fundamental and previously overlooked security risk in photonic integrated QKD systems and highlight the necessity of security-aware device design for future integrated quantum communication technologies.

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • Integrated photonics is widely regarded as a key enabler for scalable quantum key distribution (QKD), offering compactness, stability, and compatibility with semiconductor...

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