Physics-Informed Optimisation of Conveyor Mode Spin Qubit Transport

Scalable quantum information processing in spin-based architectures necessitates the a bility to reliably shuttle quantum states across extended device regions with minimal decoherence. In this work, we present a physics-informed algorithm for optimizing electrostatic bias equences that enable conveyor-mode electron transport in silicon-based quantum dot devices. Our approach combines self-consistent Poisson and Schrodinger solvers to maintain a constant ground state energy and enable near-constant velocity shuttling, with potential applicability to both single-electron and hole transport. We validate the algorithm across three representative technologies: Fully-Depleted Silicon on Insulator (FD-SOI), Silicon Metal-Oxide-Seminconductor (SiMOS) and Silicon-Germanium Heterostracture (Si/SiGe), highlighting key limitations and material-specific effects that influence transport fidelity. Our findings underscore the impact of gate geometry, dielectric interfaces, and quantum dot size on the stability of shuttling operations, and offer pathways toward improving coherence preservation in large-scale quantum systems.