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Trapped Ion Quantum Computing

Driving-dependent damping of Rabi oscillations in two-level semiconductor systems

arXiv
Authors: D. Mogilevtsev, A. P. Nisovtsev, S. Kilin, S. B. Cavalcanti, H. S. Brandi, L. E. Oliveira

Year

2007

Paper ID

49815

Status

Preprint

Abstract Read

~2 min

Abstract Words

109

Citations

N/A

Abstract

We propose a mechanism to explain the nature of the damping of Rabi oscillations with increasing driving-pulse area in localized semiconductor systems, and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and non-stationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.

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  • We propose a mechanism to explain the nature of the damping of Rabi oscillations with increasing driving-pulse area in localized semiconductor systems, and have suggested a...

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References & Citation Signals

[1] DOI https://doi.org/arXiv:0706.4372 [2] arXiv https://arxiv.org/abs/0706.4372 [3] Publisher https://arxiv.org/abs/0706.4372

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