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Growth and optical properties of self-assembled InGaAs Quantum Posts
arXiv
Authors: H. J. Krenner, C. Pryor, J. He, J. P. Zhang, Y. Wu, C. M. Morris, M. S. Sherwin, P. M. Petroff
Year
2007
Paper ID
49070
Status
Preprint
Abstract Read
~2 min
Abstract Words
73
Citations
N/A
Abstract
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.
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- This paper contributes to the Quantum Chemistry research area in the Quantum Articles archive.
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- We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural...
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