Quantum Emission in Monolayer WSe ₂ Transferred onto InP Nanowires

Abstract Localized quantum emitters in transition‐metal dichalcogenides (TMDs) have recently emerged as solid‐state candidates for on‐demand sources of single photons. Due to the role of strain in the site‐selective creation of TMD emitters, their hybrid integration into photonic structures such as cavities and waveguides is possible using pick‐and‐place methods. Here, quantum emission from a hybrid structure consisting of a monolayer of WSe 2 interfaced with horizontally aligned InP nanowires (NWs) is investigated. These experiments reveal multiple narrow and bright emission peaks in the 715–785 nm spectral range and g (2) (0) as low as 0.049, indicating strong antibunching and good single photon purity. The well‐defined facets of the InP NWs shape the local strain landscape, enabling controlled formation of localized emitters in the WSe 2 monolayer.