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Trapped Ion Quantum Computing

Atomic delocalisation as a microscopic origin of two-level defects in Josephson junctions

arXiv
Authors: Timothy C. DuBois, Salvy P. Russo, Jared H. Cole

Year

2014

Paper ID

47925

Status

Preprint

Abstract Read

~2 min

Abstract Words

94

Citations

N/A

Abstract

Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices. Focussing on so called "strongly coupled" two-level defects, we construct a theoretical model using the atomic position of the oxygen which is spatially delocalised in the oxide forming the Josephson junction barrier. Using this model, we investigate which atomic configurations give rise to two-level behaviour of the type seen in experiments. We compute experimentally observable parameters for phase qubits and examine defect response under the effects of applied electric field and strain.

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices.

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