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Trapped Ion Quantum Computing
Atomic delocalisation as a microscopic origin of two-level defects in Josephson junctions
arXiv
Authors: Timothy C. DuBois, Salvy P. Russo, Jared H. Cole
Year
2014
Paper ID
47925
Status
Preprint
Abstract Read
~2 min
Abstract Words
94
Citations
N/A
Abstract
Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices. Focussing on so called "strongly coupled" two-level defects, we construct a theoretical model using the atomic position of the oxygen which is spatially delocalised in the oxide forming the Josephson junction barrier. Using this model, we investigate which atomic configurations give rise to two-level behaviour of the type seen in experiments. We compute experimentally observable parameters for phase qubits and examine defect response under the effects of applied electric field and strain.
Why This Paper Matters
- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
- It adds a 2014 reference point for readers tracking recent quantum research.
- Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices.
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