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Topological Quantum Computing
Quantum Simulation
Multiterminal Conductance of a Floquet Topological Insulator
arXiv
Authors: L. E. F. Foa Torres, P. M. Perez-Piskunow, C. A. Balseiro, G. Usaj
Year
2014
Paper ID
47644
Status
Preprint
Abstract Read
~2 min
Abstract Words
112
Citations
N/A
Abstract
We report on simulations of the dc conductance and quantum Hall response of a Floquet topological insulator using Floquet scattering theory. Our results reveal that laser-induced edge states in graphene lead to quantum Hall plateaus once imperfect matching with the non-illuminated leads is lessened. But the magnitude of the Hall plateaus is not directly related to the number and chirality of all the edge states at a given energy as usual. Instead, the plateaus are dominated only by those edge states adding to the dc density of states. Therefore, the dc quantum Hall conductance of a Floquet topological insulator is not directly linked to topological invariants of the full the Floquet bands.
Why This Paper Matters
- This paper contributes to the Quantum Simulation research area in the Quantum Articles archive.
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- We report on simulations of the dc conductance and quantum Hall response of a Floquet topological insulator using Floquet scattering theory.
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