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Trapped Ion Quantum Computing
Telecom C-band single-photon sources with a semiconductor-dielectric microresonator
arXiv
Authors: Yuriy Serov, Aidar Galimov, Sergey Sorokin, Nikolai Maleev, Marina Kulagina, Yuriy Zadiranov, Grigorii Klimko, Maxim Rakhlin, Alexey Veretennikov, Gleb Veyshtort, Olga Lakuntsova, Yuliya Salii, Daria Berezina, Sergey Troshkov, Demid Kirilenko, Alexey Blokhin, Alexei Vasil'ev, Alexander Kuzmenkov, Mikhail Bobrov, Irina Sedova, Tatiana V. Shubina, Alexey A. Toropov
Year
2026
Paper ID
45464
Status
Preprint
Abstract Read
~2 min
Abstract Words
147
Citations
N/A
Abstract
Secure communications with quantum key distribution over fiber-optic links is one of the few recognized applications of quantum physics at the level of individual quanta - single C-band photons. Currently, the widely used sources of such photons are highly attenuated laser pulses, featured by a low probability of single photon occurrence. Here, we present an efficient source with an InAs/GaAs quantum dot on a metamorphic buffer layer inside a micropillar-shaped microcavity. The key innovation is the use of different semiconductor and dielectric materials to form the lower (GaAs/AlGaAs) and upper Si/SiO$2$ Bragg reflectors. Compatibility of these materials in a monolithic source is achieved by depositing a small amount of Si/SiO2 pairs on an incomplete micropillar made from a coherent heterostructure grown by molecular beam epitaxy. This design enables resonant excitation with π-pulses and generation of polarized photons with a record-breaking end-to-end efficiency of 11%.
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- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
- It adds a 2026 reference point for readers tracking recent quantum research.
- Secure communications with quantum key distribution over fiber-optic links is one of the few recognized applications of quantum physics at the level of individual quanta -...
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