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Trapped Ion Quantum Computing
Toward high-fidelity coherent electron spin transport in a GaAs double quantum dot
arXiv
Authors: Xinyu Zhao, Xuedong Hu
Year
2017
Paper ID
44578
Status
Preprint
Abstract Read
~2 min
Abstract Words
150
Citations
N/A
Abstract
In this paper, we investigate how to achieve high-fidelity electron spin transport in a GaAs double quantum dot. Our study examines spin transport from multiple perspectives. We first study how a double dot potential may affect/accelerate spin relaxation. We calculate spin relaxation rate in a wide range of experimental parameters and focus on the occurrence of spin hot spots. A safe parameter regime is identified in order to avoid these spin hot spots. We also study the non-adiabatic transitions in the Landau-Zener process of sweeping the interdot detuning, and propose a scheme to take advantage of possible Landau-Zener-Stükelburg interference to achieve high-fidelity spin transport at a higher speed. Finally, we calculate the double-dot correction on the effective g-factor for the tunneling electron, and estimate the resulting phase error between different spin states. Our results should provide a useful guidance for future experiments on coherent electron spin transport.
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- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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- In this paper, we investigate how to achieve high-fidelity electron spin transport in a GaAs double quantum dot.
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