Quick Navigation
Topics
Trapped Ion Quantum Computing
Single-atom transistor as a precise magnetic field sensor
arXiv
Authors: Krzysztof Jachymski, Tomasz Wasak, Zbigniew Idziaszek, Paul S. Julienne, Antonio Negretti, Tommaso Calarco
Year
2017
Paper ID
44535
Status
Preprint
Abstract Read
~2 min
Abstract Words
88
Citations
N/A
Abstract
Feshbach resonances, which allow for tuning the interactions of ultracold atoms with an external magnetic field, have been widely used to control the properties of quantum gases. We propose a scheme for using scattering resonances as a probe for external fields, showing that by carefully tuning the parameters it is possible to reach a 10-5G (or nT) level of precision with a single pair of atoms. We show that for our collisional setup it is possible to saturate the quantum precision bound with a simple measurement protocol.
Why This Paper Matters
- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
- It adds a 2017 reference point for readers tracking recent quantum research.
- Feshbach resonances, which allow for tuning the interactions of ultracold atoms with an external magnetic field, have been widely used to control the properties of quantum gases.
Paper Tools
Become a member to use research tools
Sign in to open papers, visit source links, share, cite, compare, copy DOI links, request category corrections, and build your reading list.
Show Paper arXiv Publisher Share
Cite This Paper
Copy URL
Compare
Copy DOI Add to Reading List
Category Correction Request
Category Correction Request
Help us improve classification quality by proposing a better category. Every request is reviewed by an admin.
Sign in to submit a category correction request for this paper.
Log In to SubmitReferences & Citation Signals
Community Reactions
Quick sentiment from readers on this paper.
Score:
0
Likes: 0
Dislikes: 0
Sign in to react to this paper.
Discussion & Reviews (Moderated)
Average Rating: 0.0 / 5 (0 ratings)
No written reviews yet.