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Trapped Ion Quantum Computing

Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout

arXiv
Authors: M. A. Fogarty, K. W. Chan, B. Hensen, W. Huang, T. Tanttu, C. H. Yang, A. Laucht, M. Veldhorst, F. E. Hudson, K. M. Itoh, D. Culcer, A. Morello, A. S. Dzurak

Year

2017

Paper ID

44092

Status

Preprint

Abstract Read

~2 min

Abstract Words

144

Citations

N/A

Abstract

Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.

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