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Trapped Ion Quantum Computing
Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions
arXiv
Authors: Robert Keil, Michael Zopf, Yan Chen, Bianca Hoefer, Jiaxiang Zhang, Fei Ding, Oliver G. Schmidt
Year
2016
Paper ID
42447
Status
Preprint
Abstract Read
~2 min
Abstract Words
164
Citations
N/A
Abstract
Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization entangled photon pairs. Despite remarkable progress in the last twenty years, many challenges still remain for this material, such as the extremely low yield (<1% quantum dots can emit entangled photons), the low degree of entanglement, and the large wavelength distribution. Here we show that, with an emerging family of GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling, it is possible to obtain a large ensemble (close to 100%) of polarization-entangled photon emitters on a wafer without any post-growth tuning. Under pulsed resonant two-photon excitation, all measured quantum dots emit single pairs of entangled photons with ultra-high purity, high degree of entanglement fidelity up to F=0.91, with a record high concurrence C=0.90, and ultra-narrow wavelength distribution at rubidium transitions. Therefore, a solid-state quantum repeater - among many other key enabling quantum photonic elements - can be practically implemented with this new material.
Why This Paper Matters
- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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- Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization entangled photon...
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