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Landau Zener Interaction Enhanced Quantum Sensing in Spin Defects of Hexagonal Boron Nitride
arXiv
Authors: Mohammad Abdullah Sadi, Tiamike Dudley, Luca Basso, Thomas Poirier, James H. Edgar, Jacob Henshaw, Peter A. Bermel, Yong P. Chen, Andrew Mounce
Year
2026
Paper ID
4070
Status
Preprint
Abstract Read
~2 min
Abstract Words
154
Citations
N/A
Abstract
Negatively charged boron vacancies V$B-$ in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferrable onto samples. However, broad hyperfine-split spin transitions of the ensemble pose challenges for quantum sensing with conventional resonant excitation due to limited spectral coverage. While isotopically enriched hBN using 10B and 15N isotopes h$10$B$15$N exhibits sharper spectral features, significant inhomogeneous broadening persists. We demonstrate that, implemented via frequency modulation on an FPGA, a frequency-ramped microwave pulse achieves around 4-fold greater |0rangle→|-1rangle spin-state population transfer and thus contrast than resonant microwave excitation and thus 16-fold shorter measurement time for spin relaxation based quantum sensing. Quantum dynamics simulations reveal that an effective two-state Landau-Zener model captures the complex relationship between population inversion and pulse length with relaxations incorporated. Our approach is robust and valuable for quantum relaxometry with spin defects in hBN in noisy environments.
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- Negatively charged boron vacancies VB^- in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and...
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