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28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing

arXiv
Authors: H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barral, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. De Franceschi, M. Vinet

Year

2019

Paper ID

39688

Status

Preprint

Abstract Read

~2 min

Abstract Words

83

Citations

N/A

Abstract

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent VTH controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.

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  • This paper contributes to the Quantum Machine Learning research area in the Quantum Articles archive.
  • It adds a 2019 reference point for readers tracking recent quantum research.
  • This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology.

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