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Trapped Ion Quantum Computing Quantum Simulation

Blocking-state influence on shot noise and conductance in quantum dots

arXiv
Authors: M. -C. Harabula, V. Ranjan, R. Haller, G. Fülöp, C. Schönenberger

Year

2017

Paper ID

39201

Status

Preprint

Abstract Read

~2 min

Abstract Words

142

Citations

N/A

Abstract

Quantum dots (QDs) investigated through electron transport measurements often exhibit varying, state-dependent tunnel couplings to the leads. Under specific conditions, weakly coupled states can result in a strong suppression of the electrical current and they are correspondingly called blocking states. Using the combination of conductance and shot noise measurements, we investigate blocking states in carbon nanotube (CNT) QDs. We report negative differential conductance and super-Poissonian noise. The enhanced noise is the signature of electron bunching, which originates from random switches between the strongly and weakly conducting states of the QD. Negative differential conductance appears here when the blocking state is an excited state. In this case, at the threshold voltage where the blocking state becomes populated, the current is reduced. Using a master equation approach, we provide numerical simulations reproducing both the conductance and the shot noise pattern observed in our measurements.

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