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Trapped Ion Quantum Computing
Reconstructing Quantum Dot Charge Stability Diagrams with Diffusion Models
arXiv
Authors: Vinicius Hernandes, Joseph Rogers, Rouven Koch, Thomas Spriggs, Brennan Undseth, Anasua Chatterjee, Lieven M. K. Vandersypen, Eliska Greplova
Year
2026
Paper ID
39087
Status
Preprint
Abstract Read
~2 min
Abstract Words
167
Citations
N/A
Abstract
Efficiently characterizing quantum dot (QD) devices is a critical bottleneck when scaling quantum processors based on confined spins. Measuring high-resolution charge stability diagrams (or CSDs, data maps which crucially define the occupation of QDs) is time-consuming, particularly in emerging architectures where CSDs must be acquired with remote sensors that cannot probe the charge of the relevant dots directly. In this work, we present a generative approach to accelerate acquisition by reconstructing full CSDs from sparse measurements, using a conditional diffusion model. We evaluate our approach using two experimentally motivated masking strategies: uniform grid-based sampling, and line-cut sweeps. Our lightweight architecture, trained on approximately 9,000 examples, successfully reconstructs CSDs, maintaining key physically important features such as charge transition lines, from as little as 4% of the total measured data. We compare the approach to interpolation methods, which fail when the task involves reconstructing large unmeasured regions. Our results demonstrate that generative models can significantly reduce the characterization overhead for quantum devices, and provides a robust path towards an experimental implementation.
Why This Paper Matters
- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
- It adds a 2026 reference point for readers tracking recent quantum research.
- Efficiently characterizing quantum dot (QD) devices is a critical bottleneck when scaling quantum processors based on confined spins.
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