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Trapped Ion Quantum Computing

Quantum memory on a nanophotonic silicon chip

arXiv
Authors: Stephan Rinner, Jonas Schmitt, Kilian Sandholzer, Andreas Reiserer

Year

2026

Paper ID

38914

Status

Preprint

Abstract Read

~2 min

Abstract Words

155

Citations

N/A

Abstract

Integrated photonic circuits offer great promise for quantum technologies. However, due to the rapid propagation of light, many envisioned applications require efficient on-chip quantum memories with a programmable delay, compact footprint, and high fidelity. Implementing this based on standard semiconductor processing technology is an outstanding challenge. Here, we realize such memories using erbium-doped silicon waveguides, fabricated as part of a multi-wafer project by a nanophotonic foundry. We demonstrate light storage with a 44.2(9)\ MHz bandwidth and a programmable delay exceeding 1\ μs in a device with a footprint of only 1.5times 10-2\ mm2, outperforming on-chip delay lines by many orders of magnitude. The phase of the read-out light field is preserved with a visibility of 91.3(30)\ \%. The efficiency of 1.89(28)times 10-8 can be improved in future devices through resonator enhancement and higher dopant concentrations. With this, the demonstrated approach will pave the way towards applications in photonic quantum computing based on scalable silicon processing technology.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2026 reference point for readers tracking recent quantum research.
  • Integrated photonic circuits offer great promise for quantum technologies.

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