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Trapped Ion Quantum Computing
Exchange-Only Spin-Orbit Qubits in Silicon and Germanium
arXiv
Authors: Stefano Bosco, Maximilian Rimbach-Russ
Year
2024
Paper ID
38393
Status
Preprint
Abstract Read
~2 min
Abstract Words
135
Citations
N/A
Abstract
The strong spin-orbit interaction in silicon and germanium hole quantum dots enables all-electric microwave control of single spins but is unsuited for multi-spin exchange-only qubits that rely on scalable discrete signals to suppress cross-talk and heating effects in large quantum processors. Here, we propose an exchange-only spin-orbit qubit that utilizes spin-orbit interactions to implement qubit gates and keeps the beneficial properties of the original encoding. Our encoding is robust to significant local variability in hole spin properties and, because it operates with two degenerate states, it eliminates the need for the rotating frame, avoiding the technologically demanding constraints of fast clocks and precise signal calibration. Unlike current exchange-only qubits, which require complex multi-step sequences prone to leakage, our qubit design enables low-leakage two-qubit gates in a single step, addressing critical challenges in scaling spin qubits.
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- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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- The strong spin-orbit interaction in silicon and germanium hole quantum dots enables all-electric microwave control of single spins but is unsuited for multi-spin exchange-only...
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